Bulk crystal growth and characterization of Hg₃In₂Te₆

Bulk Hg₃In₂Te₆ ingot with diameter of 30mm has been successfully grown through vertical Bridgman (VB) method. The infrared transmittance of crystal wafer cut from different parts of the ingot is measured through Fourier transformation infrared (FT-IR) transmission spectrum, and the crystalline quality of the Hg₃In₂Te₆ is evaluated by means of X-ray rocking curve. The results show that the diffraction peak of (111) oriented wafer is located at θ=12.1665° with FWHM of 0.0760°. The average infrared transmittance of Hg₃In₂Te₆ signal crystal in the middle of the ingot reach 50%, which is close to the theoretical value 57% of perfect single crystal. The dislocation and composition non-uniformity are the main reasons that lead to the infrared transmittance discrepancy of difference parts.