Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

  • S. T. Zhang
  • , X. M. Ding
  • , J. M. Zhao
  • , H. Z. Shi
  • , J. He
  • , Z. H. Xiong
  • , H. J. Ding
  • , E. G. Obbard
  • , Y. Q. Zhan
  • , W. Huang
  • , X. Y. Hou

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

The current density-voltage (J-V) characteristics of organic light-emitting devices (OLED) having buffer layers based on the WKB approximation of the tunneling model were investigated. The turn-on voltage of the device was lowered by the insertion of an insulating buffer layer of proper thickness. Good buffer layer for electron injection was observed to have high resistivity and a low conduction band minimum (CBM) level. It was found that the quantitative estimation of the optimal buffer layer thickness was related to the thickness of the organic layer.

Original languageEnglish
Pages (from-to)425-427
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number3
DOIs
StatePublished - 19 Jan 2004
Externally publishedYes

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