Bi deficiencies induced high permittivity in lead-free BNBT-BST high-temperature dielectrics

Jing Shi; Huiqing Fan; Xiao Liu; Yuan Ma; Qiang Li

doi:10.1016/j.jallcom.2014.12.022

Bi deficiencies induced high permittivity in lead-free BNBT-BST high-temperature dielectrics

Jing Shi
, Huiqing Fan
, Xiao Liu
, Yuan Ma
, Qiang Li

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Letter › peer-review

84 Scopus citations

Abstract

The electric and dielectric properties of (Bi_0.5- _yNa_0.5)_0.94- _xBa_0.06(Bi_0.2Sr_0.7□_0.1)_xTiO₃ (BNBT-BST) ceramics, derived from the morphotropic phase boundary (MPB) of the parent matrix 0.94(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃ (BNT-BT), are studied. The pseudocubic structures are formed without apparent secondary phases for all the compositions. The Bi deficiency displays significant effect on the dielectric permittivity of BNBT-BST ceramics. A plateau of high permittivity ∼5000 in the temperature evolution is formed with small variation, indicating the potential use for the high-temperature dielectrics. The bulk conductivity, calculated from the complex impendence (Z′/Z″), is conducted to learn the influence of the oxygen vacancies on the dielectric response in different atmospheres. After the re-oxidation of the Bi deficient BNBT-BST ceramics, the operational temperature range is broadened with 10% variation in permittivity from 50 °C to 300 °C.

Original language	English
Pages (from-to)	463-467
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	627
DOIs	https://doi.org/10.1016/j.jallcom.2014.12.022
State	Published - 5 Apr 2015

Keywords

Dielectrics
High-temperature
Lead-free
Oxygen vacancies

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10.1016/j.jallcom.2014.12.022

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@article{e807c310637044818cb0f61a543f2534,

title = "Bi deficiencies induced high permittivity in lead-free BNBT-BST high-temperature dielectrics",

abstract = "The electric and dielectric properties of (Bi0.5- yNa0.5)0.94- xBa0.06(Bi0.2Sr0.7□0.1)xTiO3 (BNBT-BST) ceramics, derived from the morphotropic phase boundary (MPB) of the parent matrix 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 (BNT-BT), are studied. The pseudocubic structures are formed without apparent secondary phases for all the compositions. The Bi deficiency displays significant effect on the dielectric permittivity of BNBT-BST ceramics. A plateau of high permittivity ∼5000 in the temperature evolution is formed with small variation, indicating the potential use for the high-temperature dielectrics. The bulk conductivity, calculated from the complex impendence (Z′/Z″), is conducted to learn the influence of the oxygen vacancies on the dielectric response in different atmospheres. After the re-oxidation of the Bi deficient BNBT-BST ceramics, the operational temperature range is broadened with 10\% variation in permittivity from 50 °C to 300 °C.",

keywords = "Dielectrics, High-temperature, Lead-free, Oxygen vacancies",

author = "Jing Shi and Huiqing Fan and Xiao Liu and Yuan Ma and Qiang Li",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2015",

month = apr,

day = "5",

doi = "10.1016/j.jallcom.2014.12.022",

language = "英语",

volume = "627",

pages = "463--467",

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TY - JOUR

T1 - Bi deficiencies induced high permittivity in lead-free BNBT-BST high-temperature dielectrics

AU - Shi, Jing

AU - Fan, Huiqing

AU - Liu, Xiao

AU - Ma, Yuan

AU - Li, Qiang

PY - 2015/4/5

Y1 - 2015/4/5

N2 - The electric and dielectric properties of (Bi0.5- yNa0.5)0.94- xBa0.06(Bi0.2Sr0.7□0.1)xTiO3 (BNBT-BST) ceramics, derived from the morphotropic phase boundary (MPB) of the parent matrix 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 (BNT-BT), are studied. The pseudocubic structures are formed without apparent secondary phases for all the compositions. The Bi deficiency displays significant effect on the dielectric permittivity of BNBT-BST ceramics. A plateau of high permittivity ∼5000 in the temperature evolution is formed with small variation, indicating the potential use for the high-temperature dielectrics. The bulk conductivity, calculated from the complex impendence (Z′/Z″), is conducted to learn the influence of the oxygen vacancies on the dielectric response in different atmospheres. After the re-oxidation of the Bi deficient BNBT-BST ceramics, the operational temperature range is broadened with 10% variation in permittivity from 50 °C to 300 °C.

AB - The electric and dielectric properties of (Bi0.5- yNa0.5)0.94- xBa0.06(Bi0.2Sr0.7□0.1)xTiO3 (BNBT-BST) ceramics, derived from the morphotropic phase boundary (MPB) of the parent matrix 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 (BNT-BT), are studied. The pseudocubic structures are formed without apparent secondary phases for all the compositions. The Bi deficiency displays significant effect on the dielectric permittivity of BNBT-BST ceramics. A plateau of high permittivity ∼5000 in the temperature evolution is formed with small variation, indicating the potential use for the high-temperature dielectrics. The bulk conductivity, calculated from the complex impendence (Z′/Z″), is conducted to learn the influence of the oxygen vacancies on the dielectric response in different atmospheres. After the re-oxidation of the Bi deficient BNBT-BST ceramics, the operational temperature range is broadened with 10% variation in permittivity from 50 °C to 300 °C.

KW - Dielectrics

KW - High-temperature

KW - Lead-free

KW - Oxygen vacancies

UR - https://www.scopus.com/pages/publications/84920798052

U2 - 10.1016/j.jallcom.2014.12.022

DO - 10.1016/j.jallcom.2014.12.022

M3 - 快报

AN - SCOPUS:84920798052

SN - 0925-8388

VL - 627

SP - 463

EP - 467

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Bi deficiencies induced high permittivity in lead-free BNBT-BST high-temperature dielectrics

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Keywords

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