Barriers of Au/CdZnTe with synchrotron radiation

Gangqiang Zha; Tingting Tan; Wenhua Zhang; Wanqi Jie

Barriers of Au/CdZnTe with synchrotron radiation

Gangqiang Zha
, Tingting Tan
, Wenhua Zhang
, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

Original language	English
Pages (from-to)	552-554
Number of pages	3
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	28
Issue number	SUPPL.
State	Published - Sep 2007

Keywords

CdZnTe
Metal-induced gap states
Schottky barriers SRPES

Cite this

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title = "Barriers of Au/CdZnTe with synchrotron radiation",

abstract = "Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.",

keywords = "CdZnTe, Metal-induced gap states, Schottky barriers SRPES",

author = "Gangqiang Zha and Tingting Tan and Wenhua Zhang and Wanqi Jie",

year = "2007",

month = sep,

language = "英语",

volume = "28",

pages = "552--554",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

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TY - JOUR

T1 - Barriers of Au/CdZnTe with synchrotron radiation

AU - Zha, Gangqiang

AU - Tan, Tingting

AU - Zhang, Wenhua

AU - Jie, Wanqi

PY - 2007/9

Y1 - 2007/9

N2 - Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

AB - Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

KW - CdZnTe

KW - Metal-induced gap states

KW - Schottky barriers SRPES

UR - https://www.scopus.com/pages/publications/37349084909

M3 - 文章

AN - SCOPUS:37349084909

SN - 0253-4177

VL - 28

SP - 552

EP - 554

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - SUPPL.

ER -

Barriers of Au/CdZnTe with synchrotron radiation

Abstract

Keywords

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