Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Lingyan Xu; Wanqi Jie; Xu Fu; A. E. Bolotnikov; R. B. James; Tao Feng; Gangqiang Zha; Tao Wang; Yadong Xu; Yasir Zaman

doi:10.1016/j.jcrysgro.2014.09.039

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Lingyan Xu
, Wanqi Jie
, Xu Fu
, A. E. Bolotnikov
, R. B. James
, Tao Feng
, Gangqiang Zha
, Tao Wang
, Yadong Xu
, Yasir Zaman

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
Brookhaven National Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

Original language	English
Pages (from-to)	71-74
Number of pages	4
Journal	Journal of Crystal Growth
Volume	409
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.09.039
State	Published - 1 Jan 2015

Keywords

A1. Characterization
A1. Defects
A2. Bridgman technique
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2014.09.039

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title = "Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties",

abstract = "We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.",

keywords = "A1. Characterization, A1. Defects, A2. Bridgman technique, B2. Semiconducting II-VI materials",

author = "Lingyan Xu and Wanqi Jie and Xu Fu and Bolotnikov, \{A. E.\} and James, \{R. B.\} and Tao Feng and Gangqiang Zha and Tao Wang and Yadong Xu and Yasir Zaman",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2015",

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day = "1",

doi = "10.1016/j.jcrysgro.2014.09.039",

language = "英语",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

AU - Xu, Lingyan

AU - Jie, Wanqi

AU - Fu, Xu

AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Feng, Tao

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Xu, Yadong

AU - Zaman, Yasir

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

AB - We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

KW - A1. Characterization

KW - A1. Defects

KW - A2. Bridgman technique

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/84908401095

U2 - 10.1016/j.jcrysgro.2014.09.039

DO - 10.1016/j.jcrysgro.2014.09.039

M3 - 文章

AN - SCOPUS:84908401095

SN - 0022-0248

VL - 409

SP - 71

EP - 74

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Abstract

Keywords

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