Atomic oxygen exposure process on CdZnTe pixel detector suface

Atomic oxygen exposure process on CdZnTe pixel detector contact electrode were reported in this paper. Chemical composition, defects and leakage current of the surface after atomic oxygen exposure were studied using I-V measurements, PL spectrum and XPS etc. The results show that atomic oxygen exposure forms a densified oxide layer on the surface of CdZnTe. In high atomic oxygen bombardment, the atomic oxygen damages the surface of CdZnTe crystal, which increases surface leakage current. In low atomic oxygen bombardment, extending time of bombardment can enhance chemical reaction in the bombardment process so that this process decreases surface leakage current due to the reduction of surface damage.