Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser induced damage thresholds

Yaowei Wei, Feng Pan, Qinghua Zhang, Ping Ma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Previous research on the laser damage resistance of thin film deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically the LIDT of the Al2O3 thin film reached 40 J/cm2. The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm2, the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high power laser systems.

Original languageEnglish
Title of host publicationOptical Interference Coatings, OIC 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580132
DOIs
StatePublished - 2016
Externally publishedYes
EventOptical Interference Coatings, OIC 2016 - Tucson, United States
Duration: 19 Jun 201624 Jun 2016

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceOptical Interference Coatings, OIC 2016
Country/TerritoryUnited States
CityTucson
Period19/06/1624/06/16

Keywords

  • Atomic layer deposition
  • Laser induced damage threshold
  • Optical properties

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