An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging

Sen Ren; Jianbing Xie; Qiang Shen; Fei Wang; Weizheng Yuan; Jinkuan Zhang

doi:10.1109/INEC.2018.8441926

An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging

Sen Ren
, Jianbing Xie
, Qiang Shen
, Fei Wang
, Weizheng Yuan
, Jinkuan Zhang

School of Mechanical Engineering

Northwestern Polytechnical University Xian
Flight Automatic Control Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.

Original language	English
Title of host publication	2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	37-38
Number of pages	2
ISBN (Print)	9781538642504
DOIs	https://doi.org/10.1109/INEC.2018.8441926
State	Published - 20 Aug 2018
Event	8th IEEE International Nanoelectronics Conferences, INEC 2018 - Kuala Lumpur, Malaysia Duration: 3 Jan 2018 → 5 Jan 2018

Publication series

Name	2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018

Conference

Conference	8th IEEE International Nanoelectronics Conferences, INEC 2018
Country/Territory	Malaysia
City	Kuala Lumpur
Period	3/01/18 → 5/01/18

Access to Document

10.1109/INEC.2018.8441926

Cite this

Ren, S., Xie, J., Shen, Q., Wang, F., Yuan, W., & Zhang, J. (2018). An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging. In 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018 (pp. 37-38). Article 8441926 (2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2018.8441926

@inproceedings{e7385251799e4425b0d1d9f4041a4b66,

title = "An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging",

abstract = "An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3\% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138\%FS, the hysteresis error is 0.0047\%FS, the repeatability error is 0.0071\%FS, and the accuracy is better than 0.02\%FS.",

author = "Sen Ren and Jianbing Xie and Qiang Shen and Fei Wang and Weizheng Yuan and Jinkuan Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 8th IEEE International Nanoelectronics Conferences, INEC 2018 ; Conference date: 03-01-2018 Through 05-01-2018",

year = "2018",

month = aug,

day = "20",

doi = "10.1109/INEC.2018.8441926",

language = "英语",

isbn = "9781538642504",

series = "2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "37--38",

booktitle = "2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018",

}

Ren, S, Xie, J, Shen, Q, Wang, F, Yuan, W & Zhang, J 2018, An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging. in 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018., 8441926, 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 37-38, 8th IEEE International Nanoelectronics Conferences, INEC 2018, Kuala Lumpur, Malaysia, 3/01/18. https://doi.org/10.1109/INEC.2018.8441926

An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging. / Ren, Sen; Xie, Jianbing; Shen, Qiang et al.
2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 37-38 8441926 (2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging

AU - Ren, Sen

AU - Xie, Jianbing

AU - Shen, Qiang

AU - Wang, Fei

AU - Yuan, Weizheng

AU - Zhang, Jinkuan

PY - 2018/8/20

Y1 - 2018/8/20

N2 - An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.

AB - An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5-280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.

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DO - 10.1109/INEC.2018.8441926

M3 - 会议稿件

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T3 - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018

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BT - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE International Nanoelectronics Conferences, INEC 2018

Y2 - 3 January 2018 through 5 January 2018

ER -

An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging

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