@inproceedings{53fde1a9222942ca8c2d2bac6856881f,
title = "An Enhanced Large-Signal Model of GaN HEMT Including Self-Heating Effect",
abstract = "An enhanced large-signal model of gallium nitride high electron-mobility transistor (GaN HEMT) including self-heating effect is proposed in this work. The Angelov I-V model is improved by incorporating temperature-dependent parameters, ensuring reliable performance predictions in high-power applications, to accurately describe the drain current (Ids) in both the linear and saturation regions while better capturing the self-heating effects. Additionally, the characterization and modeling of nonlinear gate-source (Cgs) and drain-source (Cgd) capacitances are carried out using the modified Angelov model, further improving the accuracy of the device representation under varying bias conditions. The large-signal model was developed and validated through comprehensive DC, S-parameter, and power efficiency simulations, demonstrating excellent agreement with the characteristics of the CGH40010F device.",
keywords = "Angelov I-V model, GaN HEMT, large-signal model, nonlinear capacitances, self-heating effect",
author = "Zhuoya Wang and He Guan and Ying Wang and Yongchuan Tang and Longxiang Hou and Yangchao Chen and Guiyu Shen",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE 8th International Conference on Integrated Circuits, Technologies, and Applications, ICTA2025 ; Conference date: 22-10-2025 Through 24-10-2025",
year = "2025",
doi = "10.1109/ICTA68203.2025.11330103",
language = "英语",
series = "2025 IEEE 8th International Conference on Integrated Circuits, Technologies and Applications, ICTA 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "176--179",
booktitle = "2025 IEEE 8th International Conference on Integrated Circuits, Technologies and Applications, ICTA 2025",
}