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A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes

  • Bao Yi Ren
  • , Run Da Guo
  • , Dao Kun Zhong
  • , Chang Jin Ou
  • , Gang Xiong
  • , Xiang Hua Zhao
  • , Ya Guang Sun
  • , Matthew Jurow
  • , Jun Kang
  • , Yi Zhao
  • , Sheng Biao Li
  • , Li Xin You
  • , Lin Wang Wang
  • , Yi Liu
  • , Wei Huang
  • Shenyang Institute of Chemical Technology
  • Lawrence Berkeley National Laboratory
  • Nanjing University of Posts and Telecommunications
  • Jilin University
  • Central China Normal University

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9′-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy)3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C2′)acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4′-bis(N-carbazolyl)-1,1′-biphenyl, and the fac-Ir(SFXpy)3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A-1, 36.3 lm W-1, and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy)3-based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A-1, 22.1 lm W-1, and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m-2. The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Original languageEnglish
Pages (from-to)8397-8407
Number of pages11
JournalInorganic Chemistry
Volume56
Issue number14
DOIs
StatePublished - 17 Jul 2017
Externally publishedYes

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