Abstract
A two-stage technique has been used to grow large diameter Hg 1-xCdxTe crystals (x=0.214) using a pressurized Bridgman (P-Bridgman) method, with a starting charge of x=0.06. The two-stage technique has enabled the growth of large crystalline ingots of HgCdTe 40mm in diameter at the very low growth temperature of 680-720°C. It was shown that the HgCdTe crystal had a homogeneous composition of x=0.214 along the growth direction.
| Original language | English |
|---|---|
| Pages (from-to) | 273-282 |
| Number of pages | 10 |
| Journal | Journal of Crystal Growth |
| Volume | 263 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1 Mar 2004 |
Keywords
- A1. Low temperature growth
- A2. Pressurized Bridgman
- A2. Two-stage technique
- B1. Large diameter HgCdTe
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