A study on the crystallization behavior of Sn-doped amorphous Ge                         2                         Sb                         2                         Te                         5                          by ultraviolet laser radiation

N. Bai; F. R. Liu; X. X. Han; Z. Zhu; F. Liu; X. Lin; N. X. Sun

doi:10.1016/j.apsusc.2014.08.007

A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation

N. Bai, F. R. Liu, X. X. Han, Z. Zhu, F. Liu, X. Lin, N. X. Sun

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this paper, the influence of Sn doping (0%, 8% and 14%) on the crystallization of Ge ₂ Sb ₂ Te ₅ was studied with the aid of an ultraviolet laser. The XRD analyses revealed that the addition of Sn maintained the NaCl-type structure of Ge2Sb2Te5 after crystallization but expanded the lattice parameter due to the smaller atomic radii of Ge replaced by Sn. Raman peaks (123,150 and 110 cmr1) moved towards lower wavenumbers (118,137 and 104 cmr ^-1 ), which can be explained by the remarkable decrease of the binding energy from Ge-Te to Sn-Te. A remarkable increase in optical contrast from 15% to 40% was observed in the Sn-doped Ge ₂ Sb ₂ Te ₅ film after crystallization with both the isothermal annealing and laser radiance. While the optical contrast changed little for a fixed volume fraction of Sn-doped sample with the variation of laser fluence which is attributed to the crystallization mechanism induced by laser under different fluences is the same.

Original language	English
Pages (from-to)	202-206
Number of pages	5
Journal	Applied Surface Science
Volume	316
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2014.08.007
State	Published - 2014

Keywords

Crystallization
Ge-Sb-Te
Optical contrast
Sn doping
Ultraviolet laser

Access to Document

10.1016/j.apsusc.2014.08.007

Cite this

Bai, N., Liu, F. R., Han, X. X., Zhu, Z., Liu, F., Lin, X., & Sun, N. X. (2014). A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation Applied Surface Science, 316(1), 202-206. https://doi.org/10.1016/j.apsusc.2014.08.007

Bai, N. ; Liu, F. R. ; Han, X. X. et al. / A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation In: Applied Surface Science. 2014 ; Vol. 316, No. 1. pp. 202-206.

@article{eceba255f08e44c4ab66c1816abb3774,

title = " A study on the crystallization behavior of Sn-doped amorphous Ge 2 Sb 2 Te 5 by ultraviolet laser radiation ",

abstract = " In this paper, the influence of Sn doping (0%, 8% and 14%) on the crystallization of Ge 2 Sb 2 Te 5 was studied with the aid of an ultraviolet laser. The XRD analyses revealed that the addition of Sn maintained the NaCl-type structure of Ge2Sb2Te5 after crystallization but expanded the lattice parameter due to the smaller atomic radii of Ge replaced by Sn. Raman peaks (123,150 and 110 cmr1) moved towards lower wavenumbers (118,137 and 104 cmr -1 ), which can be explained by the remarkable decrease of the binding energy from Ge-Te to Sn-Te. A remarkable increase in optical contrast from 15% to 40% was observed in the Sn-doped Ge 2 Sb 2 Te 5 film after crystallization with both the isothermal annealing and laser radiance. While the optical contrast changed little for a fixed volume fraction of Sn-doped sample with the variation of laser fluence which is attributed to the crystallization mechanism induced by laser under different fluences is the same.",

keywords = "Crystallization, Ge-Sb-Te, Optical contrast, Sn doping, Ultraviolet laser",

author = "N. Bai and Liu, {F. R.} and Han, {X. X.} and Z. Zhu and F. Liu and X. Lin and Sun, {N. X.}",

year = "2014",

doi = "10.1016/j.apsusc.2014.08.007",

language = "英语",

volume = "316",

pages = "202--206",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1",

}

Bai, N, Liu, FR, Han, XX, Zhu, Z, Liu, F, Lin, X & Sun, NX 2014, ' A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation ', Applied Surface Science, vol. 316, no. 1, pp. 202-206. https://doi.org/10.1016/j.apsusc.2014.08.007

A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation . / Bai, N.; Liu, F. R.; Han, X. X. et al.
In: Applied Surface Science, Vol. 316, No. 1, 2014, p. 202-206.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A study on the crystallization behavior of Sn-doped amorphous Ge 2 Sb 2 Te 5 by ultraviolet laser radiation

AU - Bai, N.

AU - Liu, F. R.

AU - Han, X. X.

AU - Zhu, Z.

AU - Liu, F.

AU - Lin, X.

AU - Sun, N. X.

PY - 2014

Y1 - 2014

N2 - In this paper, the influence of Sn doping (0%, 8% and 14%) on the crystallization of Ge 2 Sb 2 Te 5 was studied with the aid of an ultraviolet laser. The XRD analyses revealed that the addition of Sn maintained the NaCl-type structure of Ge2Sb2Te5 after crystallization but expanded the lattice parameter due to the smaller atomic radii of Ge replaced by Sn. Raman peaks (123,150 and 110 cmr1) moved towards lower wavenumbers (118,137 and 104 cmr -1 ), which can be explained by the remarkable decrease of the binding energy from Ge-Te to Sn-Te. A remarkable increase in optical contrast from 15% to 40% was observed in the Sn-doped Ge 2 Sb 2 Te 5 film after crystallization with both the isothermal annealing and laser radiance. While the optical contrast changed little for a fixed volume fraction of Sn-doped sample with the variation of laser fluence which is attributed to the crystallization mechanism induced by laser under different fluences is the same.

AB - In this paper, the influence of Sn doping (0%, 8% and 14%) on the crystallization of Ge 2 Sb 2 Te 5 was studied with the aid of an ultraviolet laser. The XRD analyses revealed that the addition of Sn maintained the NaCl-type structure of Ge2Sb2Te5 after crystallization but expanded the lattice parameter due to the smaller atomic radii of Ge replaced by Sn. Raman peaks (123,150 and 110 cmr1) moved towards lower wavenumbers (118,137 and 104 cmr -1 ), which can be explained by the remarkable decrease of the binding energy from Ge-Te to Sn-Te. A remarkable increase in optical contrast from 15% to 40% was observed in the Sn-doped Ge 2 Sb 2 Te 5 film after crystallization with both the isothermal annealing and laser radiance. While the optical contrast changed little for a fixed volume fraction of Sn-doped sample with the variation of laser fluence which is attributed to the crystallization mechanism induced by laser under different fluences is the same.

KW - Crystallization

KW - Ge-Sb-Te

KW - Optical contrast

KW - Sn doping

KW - Ultraviolet laser

UR - http://www.scopus.com/inward/record.url?scp=84922570934&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2014.08.007

DO - 10.1016/j.apsusc.2014.08.007

M3 - 文章

AN - SCOPUS:84922570934

SN - 0169-4332

VL - 316

SP - 202

EP - 206

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

Bai N, Liu FR, Han XX, Zhu Z, Liu F, Lin X et al. A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation Applied Surface Science. 2014;316(1):202-206. doi: 10.1016/j.apsusc.2014.08.007

A study on the crystallization behavior of Sn-doped amorphous Ge ₂ Sb ₂ Te ₅ by ultraviolet laser radiation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this