Abstract
Sintered nano-silver is a potential packaging material for third-generation semiconductors. In the current work, the creep evolution of sintered nano-silver under different loading conditions was studied theoretically. A damage creep model was established for the prediction of creep evolution and damage accumulation, and the accuracy of the model was verified by comparing it with the experimental data of compression and tensile and shear creep. In addition, a porosity model has been proposed based on the damage evolution of sintered nano-silver for tensile creep. For compression creep, the experiments and theoretical studies were performed to supplement the lack of compression creep of sintered nano-silver, and the porous microstructure and failure mechanism were elaborated.
| Original language | English |
|---|---|
| Pages (from-to) | 3859-3869 |
| Number of pages | 11 |
| Journal | JOM |
| Volume | 75 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2023 |
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