A Review of On-State Voltage Monitoring Circuits for Power Devices

The junction temperature of power devices is a significant factor leading to the aging and failure of these devices. By online measurement of the on-state voltage of power devices, which is a thermally sensitive parameter (TSEP), the junction temperature of power semiconductor devices can be effectively assessed. This approach allows for the estimation of the aging state of the device and the prediction of its lifespan. Over the preceding two decades, a multitude of researchers have advanced diverse conceptual designs pertaining to the monitoring circuits for the on-state voltage of semiconductor devices. However, due to complexity, cost, and other related issues, each circuit design has its own applicable scope. Therefore, it is necessary to summarize previous research in this field. This paper introduces outstanding circuit designs from papers published in the past twenty years, analyzes and compares each circuit, and finally discusses the future development trends of on-state voltage monitoring circuit design.