A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films

M. Y. Han; W. Huang

doi:10.1016/S0254-0584(97)01887-7

A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)₂Ni(DMIT)₂ thin films

M. Y. Han
, W. Huang

National University of Singapore
Peking University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)₂Ni(DMIT)₂. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.

Original language	English
Pages (from-to)	179-183
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	49
Issue number	2
DOIs	https://doi.org/10.1016/S0254-0584(97)01887-7
State	Published - 30 Jun 1997
Externally published	Yes

Keywords

DMIT
Molecular switching
Thin films

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10.1016/S0254-0584(97)01887-7

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@article{7ea2be7235624f39bc18c8dc4a07fd13,

title = "A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films",

abstract = "A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)2Ni(DMIT)2. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.",

keywords = "DMIT, Molecular switching, Thin films",

author = "Han, \{M. Y.\} and W. Huang",

year = "1997",

month = jun,

day = "30",

doi = "10.1016/S0254-0584(97)01887-7",

language = "英语",

volume = "49",

pages = "179--183",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films

AU - Han, M. Y.

AU - Huang, W.

PY - 1997/6/30

Y1 - 1997/6/30

N2 - A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)2Ni(DMIT)2. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.

AB - A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)2Ni(DMIT)2. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.

KW - DMIT

KW - Molecular switching

KW - Thin films

UR - https://www.scopus.com/pages/publications/0031170011

U2 - 10.1016/S0254-0584(97)01887-7

DO - 10.1016/S0254-0584(97)01887-7

M3 - 文章

AN - SCOPUS:0031170011

SN - 0254-0584

VL - 49

SP - 179

EP - 183

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)₂Ni(DMIT)₂ thin films

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Keywords

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