Abstract
In order to improve the oxidation and thermal shock resistance of 2D C/SiC composites, dense SiB4-SiC matrix was in situ formed in 2D C/SiC composites by a joint process of slurry infiltration and liquid silicon infiltration. The synthesis mechanism of SiB4 was investigated by analyzing the reaction products of B4C-Si system. Compared with the porous C/SiC composites, the density of C/SiC-SiB4 composites increased from 1.63 to 2.23g/cm3 and the flexural strength increased from 135 to 330MPa. The thermal shock behaviors of C/SiC and C/SiC-SiB4 composites protected with SiC coating were studied using the method of air quenching. C/SiC-SiB4 composites displayed good resistance to thermal shock, and retained 95% of the original strength after being quenched in air from 1300°C to room temperature for 60 cycles, which showed less weight loss than C/SiC composite.
| Original language | English |
|---|---|
| Pages (from-to) | 1955-1962 |
| Number of pages | 8 |
| Journal | Journal of the European Ceramic Society |
| Volume | 30 |
| Issue number | 9 |
| DOIs | |
| State | Published - Jul 2010 |
Keywords
- Borides
- Carbides
- Composites
- Fibers
- Thermal shock resistance
Fingerprint
Dive into the research topics of 'A new route to fabricate SiB4 modified C/SiC composites'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver