A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter

Bin Luo; Sihai Li; Wenqing Guan; Kai Zhou; Guagnzhao Luo; Youhua Zeng

doi:10.1109/IESES53571.2023.10253708

A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter

Bin Luo
, Sihai Li
, Wenqing Guan
, Kai Zhou
, Guagnzhao Luo
, Youhua Zeng

School of Automation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Due to the complex structure and unique characteristics of cascode GaN devices, the traditional gate driver cannot satisfy or take the full advantage of the cascode GaN. This paper presents a SPICE modeling method that takes into account circuit layout and device parasitic to analyze switching behavior under the gate driving parameters, then a gate driver(GD) is proposed, which consisting of separated turn on and turn off path by different flying capacitors and gate resistors to control gate loop impedances at different transient stage. Compare with the traditional gate driver, the proposed GD can accelerate the switching speed and suppress the overshoot, oscillation and electromagnetic interference (EMI) produced by high di/dt and dv/dt while reduce the power loss. The experiment validated the effectiveness of proposed GD.

Original language	English
Title of host publication	2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350324754
DOIs	https://doi.org/10.1109/IESES53571.2023.10253708
State	Published - 2023
Event	3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023 - Shanghai, China Duration: 26 Jul 2023 → 28 Jul 2023

Publication series

Name	2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023

Conference

Conference	3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023
Country/Territory	China
City	Shanghai
Period	26/07/23 → 28/07/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

electromagnetic interference(EMI)
GaN
gate driver
overshoot
power loss

Access to Document

10.1109/IESES53571.2023.10253708

Cite this

Luo, B., Li, S., Guan, W., Zhou, K., Luo, G., & Zeng, Y. (2023). A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter. In 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023 (2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IESES53571.2023.10253708

Luo, Bin ; Li, Sihai ; Guan, Wenqing et al. / A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter. 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023).

@inproceedings{8b2f66156c4e4e64a2441d291ae7db63,

title = "A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter",

abstract = "Due to the complex structure and unique characteristics of cascode GaN devices, the traditional gate driver cannot satisfy or take the full advantage of the cascode GaN. This paper presents a SPICE modeling method that takes into account circuit layout and device parasitic to analyze switching behavior under the gate driving parameters, then a gate driver(GD) is proposed, which consisting of separated turn on and turn off path by different flying capacitors and gate resistors to control gate loop impedances at different transient stage. Compare with the traditional gate driver, the proposed GD can accelerate the switching speed and suppress the overshoot, oscillation and electromagnetic interference (EMI) produced by high di/dt and dv/dt while reduce the power loss. The experiment validated the effectiveness of proposed GD.",

keywords = "electromagnetic interference(EMI), GaN, gate driver, overshoot, power loss",

author = "Bin Luo and Sihai Li and Wenqing Guan and Kai Zhou and Guagnzhao Luo and Youhua Zeng",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023 ; Conference date: 26-07-2023 Through 28-07-2023",

year = "2023",

doi = "10.1109/IESES53571.2023.10253708",

language = "英语",

series = "2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023",

}

Luo, B, Li, S, Guan, W, Zhou, K, Luo, G & Zeng, Y 2023, A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter. in 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023. 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023, Institute of Electrical and Electronics Engineers Inc., 3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023, Shanghai, China, 26/07/23. https://doi.org/10.1109/IESES53571.2023.10253708

A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter. / Luo, Bin; Li, Sihai; Guan, Wenqing et al.
2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter

AU - Luo, Bin

AU - Li, Sihai

AU - Guan, Wenqing

AU - Zhou, Kai

AU - Luo, Guagnzhao

AU - Zeng, Youhua

PY - 2023

Y1 - 2023

N2 - Due to the complex structure and unique characteristics of cascode GaN devices, the traditional gate driver cannot satisfy or take the full advantage of the cascode GaN. This paper presents a SPICE modeling method that takes into account circuit layout and device parasitic to analyze switching behavior under the gate driving parameters, then a gate driver(GD) is proposed, which consisting of separated turn on and turn off path by different flying capacitors and gate resistors to control gate loop impedances at different transient stage. Compare with the traditional gate driver, the proposed GD can accelerate the switching speed and suppress the overshoot, oscillation and electromagnetic interference (EMI) produced by high di/dt and dv/dt while reduce the power loss. The experiment validated the effectiveness of proposed GD.

AB - Due to the complex structure and unique characteristics of cascode GaN devices, the traditional gate driver cannot satisfy or take the full advantage of the cascode GaN. This paper presents a SPICE modeling method that takes into account circuit layout and device parasitic to analyze switching behavior under the gate driving parameters, then a gate driver(GD) is proposed, which consisting of separated turn on and turn off path by different flying capacitors and gate resistors to control gate loop impedances at different transient stage. Compare with the traditional gate driver, the proposed GD can accelerate the switching speed and suppress the overshoot, oscillation and electromagnetic interference (EMI) produced by high di/dt and dv/dt while reduce the power loss. The experiment validated the effectiveness of proposed GD.

KW - electromagnetic interference(EMI)

KW - GaN

KW - gate driver

KW - overshoot

KW - power loss

UR - https://www.scopus.com/pages/publications/85174295730

U2 - 10.1109/IESES53571.2023.10253708

DO - 10.1109/IESES53571.2023.10253708

M3 - 会议稿件

AN - SCOPUS:85174295730

T3 - 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023

BT - 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023

Y2 - 26 July 2023 through 28 July 2023

ER -

Luo B, Li S, Guan W, Zhou K, Luo G, Zeng Y. A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter. In 2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023). doi: 10.1109/IESES53571.2023.10253708

A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Cite this