A Gate Driver for Fast Switching and EMI Suppression of Cascode GaN-Based Converter

Bin Luo, Sihai Li, Wenqing Guan, Kai Zhou, Guagnzhao Luo, Youhua Zeng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Due to the complex structure and unique characteristics of cascode GaN devices, the traditional gate driver cannot satisfy or take the full advantage of the cascode GaN. This paper presents a SPICE modeling method that takes into account circuit layout and device parasitic to analyze switching behavior under the gate driving parameters, then a gate driver(GD) is proposed, which consisting of separated turn on and turn off path by different flying capacitors and gate resistors to control gate loop impedances at different transient stage. Compare with the traditional gate driver, the proposed GD can accelerate the switching speed and suppress the overshoot, oscillation and electromagnetic interference (EMI) produced by high di/dt and dv/dt while reduce the power loss. The experiment validated the effectiveness of proposed GD.

Original languageEnglish
Title of host publication2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350324754
DOIs
StatePublished - 2023
Event3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023 - Shanghai, China
Duration: 26 Jul 202328 Jul 2023

Publication series

Name2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023

Conference

Conference3rd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2023
Country/TerritoryChina
CityShanghai
Period26/07/2328/07/23

Keywords

  • electromagnetic interference(EMI)
  • GaN
  • gate driver
  • overshoot
  • power loss

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