A comparison of LaAlO₃/SrTiO₃ heterointerfaces grown by spin coating and pulsed laser deposition methods

The two dimensional electron gas (2DEG) exhibits a considerable potential in all-oxide electronics due to the emergence of novel physical phenomena at the typical LaAlO₃/SrTiO₃ (LAO/STO) heterointerfaces. However, the quality and property of 2DEG are distinctly influenced by the preparation method. Herein, we compare the pulsed laser deposition (PLD) and spin coating method by obtaining high-quality 2DEGs. The comparative studies show that all the LAO/STO heterointerfaces exhibit a perfect metallic conductive behavior under the similar thickness. Moreover, the results by SC exhibit smaller sheet resistance and higher mobility, which is attributed to fewer defect states at heterointerfaces because the chemical method can effectively avoid the ablation of high-energy plume in PLD process. Therefore, our works provide a promising fabrication method for oxide heterointerfaces with a convenient, gentle, large scale and low cost, expanding the way for the application of all-oxide electronic devices.