Abstract
The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa. The sputtering target was prepared from Cd0.9Zn0.1Te ingot. The effects of Ar pressure on the morphology, structure, composition and electrical properties of CdZnTe film were investigated. As the decrease of Ar pressure, the evolution from column to sheet and then to particle morphology of CdZnTe films were shown. The grain size decreased from 180 to 50 nm. The deposited films possess stable cubic zinc-blende structure with (111) preferred orientation and the internal stress weakened as the Ar pressure decrease. The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa. The composition of Zn and Cd was larger than that of target. The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing, the carrier concentration and mobility showed opposite trend.
| Translated title of the contribution | Effects of Ar pressure on the morphology, structure and electrical properties of CdZnTe film deposited by magnetron sputtering |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 4128-4133 |
| Number of pages | 6 |
| Journal | Gongneng Cailiao/Journal of Functional Materials |
| Volume | 49 |
| Issue number | 4 |
| DOIs | |
| State | Published - 30 Apr 2018 |