平纹编织 SiCf/SiC 复合材料的中温蠕变断裂时间及损伤机制

Translated title of the contribution: Creep rupture time and damage mechanisms of a plain woven SiCf/SiC composite at intermediate temperature

Siyu Zhu, Qiaojun Zhang, Zhiliang Hong, Kaikai Jing, Haoyang Guan, Zanlin Cheng, Yongsheng Liu, Bo Wang, Chengyu Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Silicon carbide fiber reinforced silicon carbide composites (SiCf/SiC) have great potential to be used in the thermal structure of next-generation aero-engines. The creep rupture time tu of SiCf/SiC significantly reduced at intermediate temperatures (~800℃). Therefore, this paper investigated the creep rupture behaviors of a plain weave SiCf/SiC (2D-SiCf/SiC) at 500℃, 800℃ and 1000℃ with stresses of 100 to 160 MPa in air. The morphology, microstructure and compositions of the crept specimens were observed by scanning electron microscopy, transmission electron microscopy and an energy dispersive analysis system. The results show that the tu of 2D-SiCf/SiC is closely related to the applied temperatures and stresses. At the same temperature, tu decreases with the increasing stresses at constant temperatures. When the temperature is 800℃ and the stress is greater than the proportional limit stress (PLS), embrittlement takes place for the 2D-SiCf/SiC, which means the tu and the total creep strain are much shorter than those at 500℃ and 1 000℃. The embrittlement mechanisms involve matrix cracking, oxidization of BN and formation of strong fiber/matrix interphase bonding by the filling of SiO2, as well as for the 2D-SiCf/SiC at intermediate temperatures. tu vs. the applied stress follows linear relationship in logarithmic axis, whose transition appears when the applied stress equals to PLS.

Translated title of the contributionCreep rupture time and damage mechanisms of a plain woven SiCf/SiC composite at intermediate temperature
Original languageChinese (Traditional)
JournalFuhe Cailiao Xuebao/Acta Materiae Compositae Sinica
Volume40
Issue number1
DOIs
StatePublished - Jan 2023

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