Abstract
La3+⁃doped 0.28Pb(In1/2Nb1/2)O3⁃0.32Pb(Zn1/3Nb2/3)O3⁃0.3PbTiO3⁃0.1PbZrO3 (PIN⁃PZN⁃PZT) quaternary piezoelectric ceramics were prepared by the conventional solid⁃phase method, and the effects of La3+ doping on the microstructures and electrical performances of PIN⁃PZN⁃PZT quaternary piezoelectric ceramics were investigated. The results show that introducing La3+ can enhance the local structural heterogeneity of piezoelectric ceramics, enhancing the dielectric relaxation properties to improve the piezoelectric performance. When the La2O3 content was 1.5%, piezoelectric ceramic materials with high electrically induced strain (0.23%) and high Curie temperature (206 ℃) were obtained.
| Translated title of the contribution | Preparation of La⁃doped lead⁃based piezoelectric ceramics with both high electrical strain and Curie temperature |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 329-338 |
| Number of pages | 10 |
| Journal | Chinese Journal of Inorganic Chemistry |
| Volume | 41 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2025 |
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