TY - JOUR
T1 - The effect of low energy high-dose X-ray irradiation on the performance of CdZnTe detector
AU - Liu, Hongguang
AU - Yu, Haiwen
AU - Jia, Ningbo
AU - Chen, Jianquan
AU - Yang, Mei
AU - Sun, Zhengyi
AU - Yu, Gang
AU - Li, Yudong
AU - Xi, Shouzhi
AU - Yang, Fan
AU - Wang, Tao
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2024
PY - 2025/2
Y1 - 2025/2
N2 - The paper investigated the irradiation damage of CZT detectors caused by high flux an X-ray from X-ray tube operated at a tube voltage of 140 kV and an accumulated dose of 130 kGy. Deep-level transient spectroscopy (i-DLTS) was employed to characterize the defects. Four types of irradiation-induced defects were identified, corresponding to the energy levels at Ec-0.1eV, Ev+0.17eV, Ev+0.27eV and Ec-0.55eV, which are associated with the point defects, InCd+/0, VCd -/0, VCd 2−/− and TeCd 2+/+ respectively. After the irradiation, the concentration of VCd -/0 changed from 5.63 × 1012 cm−3 to 3.30 × 1013 cm−3 and VCd 2−/− increased from 1.13 × 1012 cm−3 to 1.88 × 1013 cm−3. The resistivity of all samples showed an upward trend after the irradiation, with the most significant change observed in sample 1, where it doubled from 1.09 × 1011 Ω cm to 1.94 × 1011 Ω cm. However, the energy resolution for the spectrum peak of 241Am (59.5 keV) decreased from 6.2% to 10.7% and the signal noise to ratio decreased from 42.24 to 27.33 when irradiated from anode. The counting performance of the photon counting module decreased by approximately 1.81% after irradiation on the cathode side.
AB - The paper investigated the irradiation damage of CZT detectors caused by high flux an X-ray from X-ray tube operated at a tube voltage of 140 kV and an accumulated dose of 130 kGy. Deep-level transient spectroscopy (i-DLTS) was employed to characterize the defects. Four types of irradiation-induced defects were identified, corresponding to the energy levels at Ec-0.1eV, Ev+0.17eV, Ev+0.27eV and Ec-0.55eV, which are associated with the point defects, InCd+/0, VCd -/0, VCd 2−/− and TeCd 2+/+ respectively. After the irradiation, the concentration of VCd -/0 changed from 5.63 × 1012 cm−3 to 3.30 × 1013 cm−3 and VCd 2−/− increased from 1.13 × 1012 cm−3 to 1.88 × 1013 cm−3. The resistivity of all samples showed an upward trend after the irradiation, with the most significant change observed in sample 1, where it doubled from 1.09 × 1011 Ω cm to 1.94 × 1011 Ω cm. However, the energy resolution for the spectrum peak of 241Am (59.5 keV) decreased from 6.2% to 10.7% and the signal noise to ratio decreased from 42.24 to 27.33 when irradiated from anode. The counting performance of the photon counting module decreased by approximately 1.81% after irradiation on the cathode side.
KW - CdZnTe (CZT)
KW - Deep donor defect
KW - I-DLTS
KW - Irradiation damage
UR - http://www.scopus.com/inward/record.url?scp=85210045211&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2024.170086
DO - 10.1016/j.nima.2024.170086
M3 - 文章
AN - SCOPUS:85210045211
SN - 0168-9002
VL - 1071
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
M1 - 170086
ER -