TY - JOUR
T1 - A Hybrid Class-B/C Mode-Switching VCO With 80% Current Efficiency and 202.2 dBc/Hz FoMT
AU - Yin, Yue
AU - Lu, Haodong
AU - Qi, Haobo
AU - Feng, Ziting
AU - Zhang, Xinbing
AU - Lu, Chunming
AU - Qi, Xiaofei
N1 - Publisher Copyright:
© 2025 John Wiley & Sons Ltd.
PY - 2025
Y1 - 2025
N2 - In this article, an innovative class-B/C hybrid mode-switching technology is proposed, which can significantly improve the frequency tuning range (TR) and current efficiency of the voltage-controlled oscillator (VCO). Using the proposed technology, the class-B current in the traditional mode-switching VCO is replaced with the more efficient class-C current, thereby optimizing the power consumption and steady-state performance of the VCO. In addition, the use of a negative resistance structure with an opposite temperature coefficient improves the VCO's robustness to process, voltage, and temperature (PVT), especially to temperature changes. Thanks to the introduction of the low harmonic distortion of the class-C core and the source degeneration resistor, the flicker noise of the transistor and the phase noise (PN) of the VCO have been further improved. The VCO is designed and laid out in 65-nm complementary metal-oxide-semiconductor (CMOS) technology, with a total area of 0.12 (Formula presented.).The postsimulation TR is 41.3% from 12.6 to 19.1 GHz. The PN and figure of merit turning ((Formula presented.)) at 1-MHz offset are −113.2 and 202.2 dBc/Hz, respectively. The VCO consumes only 3.36 to 3.58 mA of current under a 1.2 V power supply, while maintaining an 80% current efficiency, which is significantly higher than the 63.7% of typical Class-B VCOs.
AB - In this article, an innovative class-B/C hybrid mode-switching technology is proposed, which can significantly improve the frequency tuning range (TR) and current efficiency of the voltage-controlled oscillator (VCO). Using the proposed technology, the class-B current in the traditional mode-switching VCO is replaced with the more efficient class-C current, thereby optimizing the power consumption and steady-state performance of the VCO. In addition, the use of a negative resistance structure with an opposite temperature coefficient improves the VCO's robustness to process, voltage, and temperature (PVT), especially to temperature changes. Thanks to the introduction of the low harmonic distortion of the class-C core and the source degeneration resistor, the flicker noise of the transistor and the phase noise (PN) of the VCO have been further improved. The VCO is designed and laid out in 65-nm complementary metal-oxide-semiconductor (CMOS) technology, with a total area of 0.12 (Formula presented.).The postsimulation TR is 41.3% from 12.6 to 19.1 GHz. The PN and figure of merit turning ((Formula presented.)) at 1-MHz offset are −113.2 and 202.2 dBc/Hz, respectively. The VCO consumes only 3.36 to 3.58 mA of current under a 1.2 V power supply, while maintaining an 80% current efficiency, which is significantly higher than the 63.7% of typical Class-B VCOs.
KW - class-B/C hybrid
KW - current efficiency
KW - mode-switching
KW - voltage controlled oscillator
UR - http://www.scopus.com/inward/record.url?scp=85219070941&partnerID=8YFLogxK
U2 - 10.1002/cta.4494
DO - 10.1002/cta.4494
M3 - 文章
AN - SCOPUS:85219070941
SN - 0098-9886
JO - International Journal of Circuit Theory and Applications
JF - International Journal of Circuit Theory and Applications
ER -